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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0270
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 2.8 GHz * 12.0 dB Typical Gain at 1.0 GHz * Unconditionally Stable (k>1) * Hermetic Gold-ceramic Microstrip Package
MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
70 mil Package
Description
The MSA-0270 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9698E
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MSA-0270 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 325 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 120C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 8.3 mW/C for TC > 161C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 25 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.8 GHz
Units
dB dB GHz
Min.
11.5
Typ.
12.5 0.6 2.8 1.4:1 1.4:1
Max.
13.5 1.0
dB dBm dBm psec V mV/C 4.5
6.5 4.5 17.0 125 5.0 -8.0 5.5
Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page.
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MSA-0270 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 25 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0
.11 .11 .10 .09 .08 .06 .02 .06 .11 .17 .22 .26 .28 .30
179 174 169 165 161 161 -150 -110 -112 -134 -147 156 179 143
12.6 12.6 12.5 12.4 12.3 12.2 11.7 11.1 10.3 9.3 8.2 7.0 4.7 3.0
4.26 4.24 4.21 4.17 4.11 4.05 3.85 3.57 3.27 2.92 2.56 2.23 1.72 1.41
176 171 162 154 146 137 116 96 82 65 48 33 8 -13
-18.4 -18.6 -18.4 -18.2 -18.2 -18.0 -17.2 -16.3 -15.7 -15.2 -14.7 -14.3 -14.0 -13.8
.120 .117 .120 .123 .123 .126 .138 .153 .165 .174 .185 .192 .199 .204
1 3 4 5 7 9 11 11 14 12 6 3 -6 -14
.12 .12 .13 .14 .14 .15 .16 .16 .14 .13 .15 .19 .27 .29
-8 -15 -30 -44 -55 -64 -84 -102 -106 -114 -111 -107 -107 -119
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
14 12 Gain Flat to DC 10 40 TC = +125C TC = +25C 30 T = -55C C 14
12
G p (dB)
8 6 4
20
G p (dB)
I d (mA)
10
8 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 15 20 25 30 I d (mA) 35 40
10 2 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 1 2 3 Vd (V) 4 5 6
6
4
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 25 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G p (dB)
13 12
12 10 I d = 40 mA
7.5
11 8 7 6
GP
7.0
P1 dB (dBm)
8 NF 7
8
NF (dB)
I d = 25 mA
6 4 2
6.5
P1 dB (dBm)
5 4 3 2 -55 -25 +25 +85
P1 dB
5 4 3 2 +125
NF (dB)
6
6.0
I d = 18 mA 0 0.1 0.2 0.3
5.5 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5
I d = 18 mA I d = 25 mA I d = 40 mA 1.0 2.0 4.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 25 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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70 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
.004 .002 .10 .05
.070 1.70
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.495 .030 12.57 .76
.035 .89
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